In the realm of electronics and charging technology, an exciting innovation is underway with the emergence of Gallium Nitride (GaN). Since the 1990s, this binary III/V semiconductor material has been primarily utilized in blue light-emitting diodes. However, recently it has found its way into chargers, and the impact is revolutionary.

Gallium Nitride (GaN) is a crystalline material with a unique Wurtzite crystal structure and a wide bandgap of 3.4 eV. These properties make it particularly suitable for applications in optoelectronics, high-power, and high-frequency devices. For instance, GaN enables violet (405 nm) laser diodes without the need for nonlinear optical frequency doubling.

GaN Valley

In the dynamic landscape of technological advancement, Gallium Nitride (GaN) stands as a beacon of innovation, driving efficiency, sustainability, and transformative electronics. As GaN technology continues to revolutionize various industries, it finds itself at the heart of a thriving business cluster known as GaN Valley.

GaN Valley serves as a vibrant ecosystem where forward-thinking companies converge to leverage the power of GaN technologies. Here, collaboration flourishes, synergies emerge, and growth opportunities abound, particularly in areas of energy efficiency, sustainability, and revolutionary electronics.

Building a WBG Semiconductor Innovation Ecosystem in Europe

“GaN Valley” points to a connected ecosystem along the value chain of GaN technologies, products and electrical systems, spanning research and innovation (such as top-notch universities & RTOs), IDMs, Fabless Companies (including a growing industry of GaN start-ups & scale-ups), GaN Foundries, multi-market customers, as well as various Government Innovation instances. GaN Valley was initiated by BelGaN, and now reaches to all corners of Europe.

GaN Valley Vision: ACCELERATE and SCALE-UP of the GaN-based Industry and build a thriving ecosystem through knowledge sharing and collaboration with all parties along the value chain.

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